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PDF IRF9620 Data sheet ( Hoja de datos )
| Número de pieza | IRF9620 | |
| Descripción | 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9620
July 1999 File Number 2283.2
3.5A, 200V, 1.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17502.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9620
TO-220AB
IRF9620
NOTE: When ordering, use the entire part number.
Features
• 3.5A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-21
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9620
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS ≈ CDS + CGD
300 CISS
200
100
0
0
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
2.4
1.6
TJ = -55oC
TJ = 25oC
TJ = 125oC
0.8
0
0 -1 -2 -3 -4 -5
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-10
TJ = 150oC
-1.0 TJ = 25oC
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -3.5A
-5
VDS = -60V
VDS = -40V
-10
VDS = -100V
0 4 8 12 16 20
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-25
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9620.PDF ] | |
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