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Numéro de référence | IRF9530SMD | ||
Description | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | ||
Fabricant | Seme LAB | ||
Logo | |||
IRF9530SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
!
3 .6 0 (0 .1 4 2 )
M ax.
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
Pad 1 – Gate
SMD 1
Pad 2 – Drain
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
Pad 3 – Source
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
-100V
-8A
0.35W
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
8A
ID Continuous Drain Current @ Tcase = 100°C
5A
IDM Pulsed Drain Current
40A
PD Power Dissipation @ Tcase = 25°C
45W
Linear Derating Factor
0.36W/°C
TJ , Tstg
RqJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Prelim. 07/00
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Pages | Pages 2 | ||
Télécharger | [ IRF9530SMD ] |
No | Description détaillée | Fabricant |
IRF9530SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | Seme LAB |
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