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PDF IRF9530NS Data sheet ( Hoja de datos )
| Número de pieza | IRF9530NS | |
| Descripción | Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Advanced Process Technology
l Surface Mount (IRF9530NS)
l Low-profile through-hole (IRF9530NL)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9530NL) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91523A
IRF9530NS/L
HEXFET® Power MOSFET
D VDSS = -100V
RDS(on) = 0.20Ω
ID = -14A
S
D 2 Pak
T O -26 2
Max.
-14
-10
-56
3.8
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98
1 page  
14
12
10
8
6
4
2
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF9530NS/L
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0 .0 5
0.1 0.02
0 .0 1
SING LE PU LS E
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
Notes:
1. Duty factor D = t1 / t 2
t1
t2
2. P eak TJ = P D M x Z th JC + T C
0.001
0.01
0.1
t1 , R ectangular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF9530NS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF9530N | Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) | International Rectifier |
| IRF9530NL | Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) | International Rectifier |
| IRF9530NLPbF | Power MOSFET ( Transistor ) |  Infineon |
| IRF9530NLPBF | (IRF9530NLPBF / IRF9530NSPBF) Advanced Process Technology Surface Mount | International Rectifier |
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