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PDF IRF9140 Data sheet ( Hoja de datos )
| Número de pieza | IRF9140 | |
| Descripción | -19A/ -100V/ 0.200 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9140
February 1999 File Number 2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power
MOSFET
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17521.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9140
TO-204AA
IRF9140
NOTE: When ordering, include the entire part number.
Features
• -19A, -100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
5-14
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9140
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
2000
1600
1200
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
800
COSS
400 CRSS
0 0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
80µs PULSE TEST
12
9
6
TJ = -55oC
TJ = 25oC
TJ = 125oC
3
0
0 -20 -40 -60 -80 -100
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
-5
-10
102
5
2 TJ = 150oC
10
5
TJ = 25oC
2
1.0
5
2
0.1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -24A
VDS = -20V
VDS = -50V
VDS = -80V
-15
-20
0
20 40 60
Qg(TOT), TOTAL GATE CHARGE (nC)
80
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-18
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9140.PDF ] | |
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