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IRF7831 fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF7831
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7831 fiche technique
Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94636
IRF7831
HEXFET® Power MOSFET
VDSS
RDS(on) max Qg (typ.)
:30V 3.6m @VGS = 10V 40nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Notes  through „ are on page 10
www.irf.com
Max.
30
± 12
21
17
170
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
7/9/03

PagesPages 10
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