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PDF IRF7811AV Data sheet ( Hoja de datos )
| Número de pieza | IRF7811AV | |
| Descripción | N-Channel Application-Specific MOSFETs | |
| Fabricantes | International Rectifier | |
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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
TA = 25°C
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
I
D
IDM
PD
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF78P1D-194A00V9
IRF7811AV
SO-8
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
DEVICE CHARACTERISTICS
R
DS(on)
QG
Qsw
Qoss
IRF7811AV
11mΩ
17nC
6.7nC
8.1nC
IRF7811AV
30
±20
10.8
11.8
100
2.5
3.0
–55 to 150
2.5
50
Max.
50
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
12/13/00
1 page  
IRF7811AV
SO-8 Package Details
D
-B- 5
5E
-A-
87 65
12 34
H
0.25 (.010) M A M
e
6X e1
θ
θ
K x 45°
A
-C -
B 8X
A1
0.10 (.004)
L6
8X
C
8X
0.25 (.010) M C A S B S
NOTES:
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
6 D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O A S U B S TR A TE ..
IN C H ES M ILLIM E T ER S
D IM
M IN M AX M IN M AX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .05 0 B ASIC 1.27 BA SIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ 0° 8°
0° 8°
R EC O M M EN D ED FO O TPR INT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.0 70 )
8X
SO-8 Part Marking
www.irf.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRF7811AV.PDF ] | |
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