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PDF IRF7750 Data sheet ( Hoja de datos )
| Número de pieza | IRF7750 | |
| Descripción | Power MOSFET(Vdss=-20V/ Rds(on)=0.030ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7750 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
PD - 93848A
IRF7750
HEXFET® Power MOSFET
VDSS = -20V
TSSOP-8
RDS(on) = 0.030Ω
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for, provides the designer with an extremely efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Max.
125
Units
°C/W
1
5/25/2000
1 page  
IRF7750
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
20
16
12
8
4
0
0.01
0.10 1.00 10.00
Time (sec)
100.00
Fig 10. Typical Power Vs. Time
1000
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7750.PDF ] | |
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