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International Rectifier - Power MOSFET(Vdss=-30V)

Numéro de référence IRF7705
Description Power MOSFET(Vdss=-30V)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7705 fiche technique
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.2mm)
l Available in Tape & Reel
VDSS
-30V
PD - 94001A
IRF7705
HEXFET® Power MOSFET
RDS(on) max (mΩ)
18 @VGS = -10V
30 @VGS = -4.5V
ID
-8.0A
-6.0A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3G
4
1= D
2= S
3= S
4= G
D8
7
6
S5
8= D
7= S
6= S
5= D
TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.0
-30
1.5
0.96
0.012
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
83
Units
°C/W
1
06/05/01

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