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IRF7704 Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - Power MOSFET(Vdss=-40V)

شماره قطعه IRF7704
شرح مفصل Power MOSFET(Vdss=-40V)
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF7704 شرح
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
VDSS
-40V
PD- 94160
IRF7704
HEXFET® Power MOSFET
RDS(on) max (mΩ)
46@VGS = -10V
74@VGS = -4.5V
ID
-4.6A
-3.7A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3G
4
1= D
2= S
3= S
4= G
D8
7
6
S5
8= D
7= S
6= S
5= D
TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-4.6
-3.7
-19
1.5
1.0
12
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
83
Units
°C/W
1
3/19/01

قانون اساسیصفحه 8
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