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IRF7607 Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm)

شماره قطعه IRF7607
شرح مفصل Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm)
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF7607 شرح
PROVISIONAL
PD - 93845
IRF7607
q Trench Technology
q Ultra Low On-Resistance
q N-Channel MOSFET
q Very Small SOIC Package
q Low Profile (<1.1mm)
q Available in Tape & Reel
S
S
S
G
Description
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
HEXFET® Power MOSFET
A
A
1 8D
2
7D
VDSS = 20V
3 6D
4 5 D RDS(on) = 0.030
Top View
Micro8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
6.5
5.2
50
1.8
1.2
0.014
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
70
Units
°C/W
1
1/19/00

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