|
|
PDF IRF7555 Data sheet ( Hoja de datos )
| Número de pieza | IRF7555 | |
| Descripción | Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF7555 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
PD -91865B
q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Very Small SOIC Package
q Low Profile (<1.1mm)
q Available in Tape & Reel
S1
G1
S2
G2
Description
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
IRF7555
HEXFET® Power MOSFET
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
VDSS = -20V
RDS(on) = 0.055Ω
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
TJ , TSTG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
-20
-4.3
-3.4
-34
1.25
0.8
10
± 12
36
1.1
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
mJ
V/ns
°C
Units
100
°C/W
1
2/2/00
1 page  
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7555
100
ID
TOP
-1.3A
-2.4A
80 BOTTOM -3.0A
60
40
20
0
25 50 75 100 125 150
Starting TJ, Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7555.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF7555 | Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm) | International Rectifier |
| IRF7555PBF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |