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PDF IRF7530 Data sheet ( Hoja de datos )
| Número de pieza | IRF7530 | |
| Descripción | Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7530 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD-93760B
IRF7530
q Trench Technology
q Ultra Low On-Resistance
q Dual N-Channel MOSFET
q Very Small SOIC Package
q Low Profile (<1.1mm)
q Available in Tape & Reel
S1
G1
S2
G2
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
HEXFET® Power MOSFET
18
27
36
45
Top V iew
D1
D 1 VDSS = 20V
D2
D 2 RDS(on) = 0.030Ω
Micro8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Q
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche EnergyT
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
5.4
4.3
40
1.3
0.80
10
33
± 12
-55 to + 150
Units
V
A
W
mW/°C
mJ
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-AmbientS
Max.
100
Units
°C/W
1
02/16/01
1 page  
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7530
80
ID
TOP
2.2A
4.0A
BOTTOM 5.0A
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7530.PDF ] | |
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