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IRF7524D1 Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - FETKY MOSFET & Schottky Diode(Vdss=-20V/ Rds(on)=0.27ohm/ Schottky Vf=0.39V)

شماره قطعه IRF7524D1
شرح مفصل FETKY MOSFET & Schottky Diode(Vdss=-20V/ Rds(on)=0.27ohm/ Schottky Vf=0.39V)
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF7524D1 شرح
PD -91648C
PRELIMINARY
IRF7524D1
FETKYTM MOSFET & Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l Micro8TM Footprint
Description
A1
A2
8K
7K
VDSS = -20V
S3
6 D RDS(on) = 0.27
G4
5D
Schottky Vf = 0.39V
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current Œ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient 
Maximum
-1.7
-1.4
-14
1.25
0.8
10
± 12
-5.0
-55 to +150
Maximum
100
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD -1.2A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs – duty cycle 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
01/29/99

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