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PDF IRF7521D1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7521D1 | |
| Descripción | FETKY MOSFET / Schottky Diode(Vdss=20V/ Rds(on)=0.135ohm/ Schottky Vf=0.39V) | |
| Fabricantes | International Rectifier | |
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PD-91646C
PRELIMINARY
IRF7521D1
FETKY™ MOSFET / Schottky Diode
q Co-packaged HEXFET® Power MOSFET
and Schottky Diode
q N-Channel HEXFET
q Low VF Schottky Rectifier
q Generation 5 Technology
q Micro8TM Footprint
A
A
S
G
1
2
3
4
8K
7K
6D
VDSS = 20V
RDS(on) = 0.135Ω
5 D Schottky Vf = 0.39V
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8TM
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
2.4
1.9
19
1.3
0.8
10
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
± 12
5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
100
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
www.irf.com
1
01/29/99
1 page  
Power Mosfet Characteristics
IRF7521D1
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.0
0.8
VGS = 2.5V
0.6
0.4
0.2
VVGS== 54..00V
0.0 A
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
I D , D rain C urrent (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
0.12
0.10
ID = 1.7A
0.08
0.06
0.04
0.0
2.0 4.0 6.0
V G S , Gate-to-Source V oltage (V )
A
8.0
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7521D1.PDF ] | |
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