DataSheetWiki


IRF7501 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm)

Numéro de référence IRF7501
Description Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRF7501 fiche technique
l Generation V Technology
l Ulrtra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
PRELIMINARY
PD - 91265H
IRF7501
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS =20V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.135
Top V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGSM
VGS
dv/dt
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation„
Maximum Power Dissipation „
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10µs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient „
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
-55 to + 150
240 (1.6mm from case)
Max.
100
Units
V
A
W
W
W/°C
V
V
V/ns
°C
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
4/30/98

PagesPages 7
Télécharger [ IRF7501 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF750 Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor
IRF7501 Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm) International Rectifier
International Rectifier
IRF7501PBF Power MOSFET ( Transistor ) International Rectifier
International Rectifier
IRF7503 Power MOSFET(Vdss=30V/ Rds(on)=0.135ohm) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche