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IRF7493 fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF7493
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7493 fiche technique
PD - 94654B
IRF7493
Applications
l High frequency DC-DC converters
HEXFET® Power MOSFET
VDSS RDS(on) max Qg (typ.)
80V 15m:@VGS=10V 35nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
S
S
l Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fMaximum Power Dissipation
fMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
RθJA
Junction-to-Lead
Junction-to-Ambient
Notes  through … are on page 9
Max.
80
± 20
9.3
7.4
74
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
www.irf.com
1
7/29/03

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