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Numéro de référence | IRF7476 | ||
Description | Power MOSFET(Vdss=12V/ Id=15A) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
RDS(on) max
ID
8.0mΩ@VGS = 4.5V 15A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
±12
15
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
04/29/02
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Pages | Pages 8 | ||
Télécharger | [ IRF7476 ] |
No | Description détaillée | Fabricant |
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