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PDF IRF7473 Data sheet ( Hoja de datos )
| Número de pieza | IRF7473 | |
| Descripción | Power MOSFET(Vdss=100V/ iD=6.9A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7473 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD- 94037A
IRF7473
HEXFET® Power MOSFET
Applications
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
l Uninterrutible Power Supply
Benefits
l Ultra Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
Dynamic dv/dt
l Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l Full and Half Bridge 48V input Circuit
l Forward 24V input Circuit
VDSS
100V
RDS(on) max
ID
26mΩ@VGS = 10V 6.9A
S1
S2
S3
G4
A
A
8D
7D
6D
5D
T op V iew
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
6.9
5.5
55
2.5
0.02
± 20
5.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
4/27/01
1 page  
IRF7473
8.0
RD
VDS
6.0 VGS D.U.T.
RG +-VDD
10V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7473.PDF ] | |
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