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Numéro de référence | IRF7465 | ||
Description | Power MOSFET(Vdss=150V/ Id=1.9A) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD-93896
IRF7465
HEXFET® Power MOSFET
RDS(on) max
ID
0.28Ω@VGS = 10V 1.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
T op V iew
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.9
1.5
15
2.5
0.02
± 30
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2/8/01
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Pages | Pages 8 | ||
Télécharger | [ IRF7465 ] |
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