DataSheetWiki


IRF7465 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=150V/ Id=1.9A)

Numéro de référence IRF7465
Description Power MOSFET(Vdss=150V/ Id=1.9A)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRF7465 fiche technique
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD-93896
IRF7465
HEXFET® Power MOSFET
RDS(on) max
ID
0.28@VGS = 10V 1.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
T op V iew
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.9
1.5
15
2.5
0.02
± 30
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2/8/01

PagesPages 8
Télécharger [ IRF7465 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF7460 Power MOSFET(Vdss=20V/ Id=12A) International Rectifier
International Rectifier
IRF7460 8-PIN SYNCHRONOUS PWM CONTROLLER International Rectifier
International Rectifier
IRF7460PBF HEXFET Power MOSFET International Rectifier
International Rectifier
IRF7463 Power MOSFET(Vdss=30V/ Rds(on)max=0.008ohm/ Id=14A) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche