DataSheetWiki


IRF7413A fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm)

Numéro de référence IRF7413A
Description Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRF7413A fiche technique
PD - 9.1613A
PRELIMINARY
IRF7413A
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
VDSS = 30V
RDS(on) = 0.0135
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ,TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
12
8.4
58
2.5
0.02
± 20
260
5.0
-55 to + 150
Units
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient†
Typ.
–––
Max.
50
Units
°C/W
8/25/97

PagesPages 9
Télécharger [ IRF7413A ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF7413 Power MOSFET(Vdss=30V/ Id=12A) International Rectifier
International Rectifier
IRF7413A Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm) International Rectifier
International Rectifier
IRF7413PBF HEXFET Power MOSFET International Rectifier
International Rectifier
IRF7413PBF-1 Power MOSFET ( Transistor ) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche