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IRF7241 fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF7241
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7241 fiche technique
q Trench Technology
q Ultra Low On-Resistance
q P-Channel MOSFET
q Available in Tape & Reel
VDSS
-40V
PD- 94087
IRF7241
HEXFET® Power MOSFET
RDS(on) max (mΩ)
41@VGS = -10V
70@VGS = -4.5V
ID
-6.2A
-5.0A
Description
S1
A
8D
New trench HEXFET® Power MOSFETs from S 2
7D
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance S 3
6D
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power G
4
5D
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
Top View
in battery and load management applications.
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
1/26/01

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