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PDF IRF7106 Data sheet ( Hoja de datos )

Número de pieza IRF7106
Descripción Power MOSFET(Vdss=+-20V)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7106 Hoja de datos, Descripción, Manual

PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1098B
IRF7106
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Description
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.1250.20
ID 3.0A -2.5A
SO-8
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Junction-to-Ambient (PCB Mount)**
Max.
N-Channel
P-Channel
3.0
2.5
10
2.0
0.016
± 20
3.0
-55 to + 150
-2.5
-2.0
-10
-3.0
Units
A
W
W/°C
V
V/ns
°C
Min.
––––
Typ.
––––
Max.
62.5
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
69
Revision 3

1 page




IRF7106 pdf
100 VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
1
-4.5V
P-Channel
100 VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
1
IRF7106
-4.5V
20µs PULSE WIDTH
0.1
TJ = 25°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics,
TJ = 25oC
100
TJ = 25°C
TJ = 150°C
10
0.1
0.1
20µs PULSE WIDTH
TJ = 150°C
A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 13. Typical Output Characteristics,
TJ = 150oC
2.0
ID = -2.5A
1.5
1.0
VDS = -15V
20µs PULSE WIDTH
1A
4 6 8 10
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
800
V GS = 0V,
f = 1MHz
C iss = Cgs + Cgd , Cds SHORTED
C rss = C gd
Coss = Cds + Cgd
600
Coss
Ciss
400
200 Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
73
0.5
0.0
VGS = -10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
20
I D = -2.3A
VDS = -10V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 22
0A
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage

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