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Numéro de référence | IRF6604 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
IRFP6D6- 9403645E
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
11.5mΩ@VGS = 7.0V 17nC
13mΩ@VGS = 4.5V
MQ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ SX ST
MQ MX MT
Description
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed
regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize
thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 7.0V
Continuous Drain Current, VGS @ 7.0V
Continuous Drain Current, VGS @ 7.0V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
Linear Derating Factor
±12
49
12
9.2
92
2.3
1.5
42
0.018
A
W
W/°C
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-40 to + 150
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
°C/W
wNwotwes.irf.cothmrough are on page 11
1
11/16/05
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Pages | Pages 13 | ||
Télécharger | [ IRF6604 ] |
No | Description détaillée | Fabricant |
IRF6601 | DirectFET Power MOSFET(Vdss=20V) | International Rectifier |
IRF6603 | HEXFETPower MOSFET | International Rectifier |
IRF6604 | Power MOSFET ( Transistor ) | International Rectifier |
IRF6607 | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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