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International Rectifier - DirectFET Power MOSFET(Vdss=20V)

Numéro de référence IRF6601
Description DirectFET Power MOSFET(Vdss=20V)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF6601 fiche technique
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with exisiting Surface Mount
Techniques
PD - 94366C
IRF6601
DirectFETTM Power MOSFET
VDSS
20V
RDS(on) max
3.8m@VGS = 10V
5.0m@VGS = 4.5V
ID
26A
21A
DirectFET™ ISOMETRIC
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Max.
20
85
26
20
200
3.6
2.3
42
28
±20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Symbol
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-Ambient„
Junction-to-Ambient…
Junction-to-Case†
Junction-to-PCB mounted
Typ.
–––
–––
–––
–––
–––
Max.
35
12.5
20
3.0
1.0
Units
°C/W
1
3/25/02

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