|
|
PDF IRF640S Data sheet ( Hoja de datos )
| Número de pieza | IRF640S | |
| Descripción | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF640S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
® IRF640S
N - CHANNEL 200V - 0.150Ω - 18A TO-263
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
IRF640S
200 V < 0.18 Ω 18 A
s TYPICAL RDS(on) = 0.150 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
3
1
D2PAK
TO-263
(suffix ”T4”)
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM (•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
Un it
200 V
200 V
± 20
V
18 A
11 A
72 A
125 W
1.0 W /o C
5
-65 to 150
150
( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
September 1999
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
IRF640S
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF640S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF640 | N-channel TrenchMOS transistor |  NXP Semiconductors |
| IRF640 | N-CHANNEL 200V, 18A, MOSFET ( TO-220/TO-220FP ) | STMicroelectronics |
| IRF640 | Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A) |  International Rectifier |
| IRF640 | 200V N-Channel MOSFET |  Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |