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PDF IRF630 Data sheet ( Hoja de datos )
| Número de pieza | IRF630 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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IRF630
IRF630FP
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP
Mesh overlay™ II Power MOSFET
General features
Type
IRF630
IRF630FP
VDSS
200V
200V
RDS(on)
<0.40Ω
<0.40Ω
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized
ID
9A
9A
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
IRF630
IRF630FP
August 2006
Marking
IRF630
IRF630FP
Package
TO-220
TO-220FP
Rev 9
Packaging
Tube
Tube
1/14
www.st.com
14
1 page  
IRF630 - IRF630FP
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A, VGS=0
ISD=9A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
9A
36 A
1.5 V
170 ns
0.95 µC
11 A
5/14
5 Page 
IRF630 - IRF630FP
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IRF630.PDF ] | |
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