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PDF IRF610 Data sheet ( Hoja de datos )
| Número de pieza | IRF610 | |
| Descripción | 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF610
June 1999 File Number 1576.3
3.3A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17442.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF610
TO-220AB
IRF610
NOTE: When ordering, use the entire part number.
Features
• 3.3A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-190
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF610
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
320 CRSS = CGD
COSS = CDS + CGD
240
160
COSS
80 CRSS
CISS
0
12
5 10 2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.2 VDS ≥ 50V
TJ = 25oC
0.9 TJ = 150oC
0.6
PULSE DURATION = 80µs
100 DUTY CYCLE = 0.5% MAX
TJ = 150oC
TJ = 25oC
10
0.3
0
012345
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
1
0 0.4 0.8 1.2 1.6 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 3.2A
16
12
VDS = 40V
VDS = 100V
8 VDS = 160V
4
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-194
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF610.PDF ] | |
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