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PDF IRF5Y9540CM Data sheet ( Hoja de datos )
| Número de pieza | IRF5Y9540CM | |
| Descripción | POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-18A) | |
| Fabricantes | International Rectifier | |
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PD - 94027A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y9540CM
100V, P-CHANNEL
Product Summary
Part Number
IRF5Y9540CM
BVDSS
-100V
RDS(on) ID
0.117Ω -18A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
-18
-11 A
-72
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy ➁
256
mJ
Avalanche Current ➀
-11 A
Repetitive Avalanche Energy ➀
7.5 mJ
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
4.4
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
11/17/00
1 page  
IRF5Y9540CM
20
16
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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