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IRF5Y3205CM Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.022ohm/ Id=18A*)

شماره قطعه IRF5Y3205CM
شرح مفصل POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.022ohm/ Id=18A*)
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF5Y3205CM شرح
PD - 94179A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y3205CM
55V, N-CHANNEL
Product Summary
Part Number
IRF5Y3205CM
BVDSS
55V
RDS(on) ID
0.02218A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
18*
18* A
72
100 W
0.8 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy
634
mJ
Avalanche Current
18 A
Repetitive Avalanche Energy
10 mJ
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
2.5
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
5/25/01

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شماره قطعه شرح مفصل تولید کنندگان
IRF5Y3205CM POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.022ohm/ Id=18A*) International Rectifier
International Rectifier

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