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International Rectifier - POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-18A)

Numéro de référence IRF5NJ9540
Description POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-18A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5NJ9540 fiche technique
PD - 94038A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ9540
100V, P-CHANNEL
Product Summary
Part Number
IRF5NJ9540
BVDSS
-100V
RDS(on) ID
0.117-18A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
-18
-11
-72
75
0.6
±20
260
-11
7.5
4.1
-55 to 150
300 (for 5 s)
1.0 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
7/13/01

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