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IRF5NJ540 Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.052ohm/ Id=22A*)

شماره قطعه IRF5NJ540
شرح مفصل POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.052ohm/ Id=22A*)
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF5NJ540 شرح
PD - 94020A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ540
100V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRF5NJ540
100V
RDS(on)
0.052
ID
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
22*
16
88
75
0.60
±20
200
16
7.5
4.1
-55 to 150
300 (for 5 s)
1.0
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
7/13/01

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شماره قطعه شرح مفصل تولید کنندگان
IRF5NJ540 POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.052ohm/ Id=22A*) International Rectifier
International Rectifier

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