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International Rectifier - POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)

Numéro de référence IRF5N3205
Description POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5N3205 fiche technique
PD - 94302A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-1)
IRF5N3205
55V, N-CHANNEL
Product Summary
Part Number
IRF5N3205
BVDSS
55V
RDS(on) ID
0.00855A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-1
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
55*
55*
220
125
1.0
±20
140
55
12.5
2.7
-55 to 150
300 (for 5s)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
01/15/02

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