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IRF5851 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss = +-20 V)

Numéro de référence IRF5851
Description Power MOSFET(Vdss = +-20 V)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5851 fiche technique
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
G1 1
S2 2
G2 3
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and RDS(on) reduction enables an
increase in current-handling capability.
PD-93998A
IRF5851
HEXFET® Power MOSFET
6 D1
N-Ch
VDSS 20V
5 S1
P-Ch
-20V
4 D2 RDS(on) 0.0900.135
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient ƒ
Max.
N-Channel
P-Channel
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
-20
-2.2
-1.7
-9.0
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
2/26/02

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