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IRF5806 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=-20V)

Numéro de référence IRF5806
Description Power MOSFET(Vdss=-20V)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5806 fiche technique
q Trench Technology
q Ultra Low On-Resistance
q P-Channel MOSFET
q Available in Tape & Reel
VDSS
-20V
PD - 93997
IRF5806
HEXFET® Power MOSFET
RDS(on) max
86m@VGS = -4.5V
147m@VGS = -2.5V
ID
-4.0A
-3.0A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
D1
A
6D
D2
5D
G3
4S
Top V ie w
Micro6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Max.
62.5
Units
°C/W
1
10/04/00

PagesPages 8
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