|
|
Número de pieza | IRF5806 | |
Descripción | Power MOSFET(Vdss=-20V) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF5806 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! q Trench Technology
q Ultra Low On-Resistance
q P-Channel MOSFET
q Available in Tape & Reel
VDSS
-20V
PD - 93997
IRF5806
HEXFET® Power MOSFET
RDS(on) max
86mΩ@VGS = -4.5V
147mΩ@VGS = -2.5V
ID
-4.0A
-3.0A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
D1
A
6D
D2
5D
G3
4S
Top V ie w
Micro6™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Max.
62.5
Units
°C/W
1
10/04/00
1 page IRF5806
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF5806.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF5800 | Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm) | International Rectifier |
IRF5800PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF5801 | Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A) | International Rectifier |
IRF5801PbF | Power MOSFET ( Transistor ) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |