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IRF5805 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=-30V)

Numéro de référence IRF5805
Description Power MOSFET(Vdss=-30V)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5805 fiche technique
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
VDSS
-30V
PD -94029
IRF5805
HEXFET® Power MOSFET
RDS(on) max
0.098@VGS = -10V
0.165@VGS = -4.5V
ID
-3.8A
-3.0A
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
D1
A
6D
D2
5D
G3
4S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.8
-3.0
-15
2
1.28
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
62.5
Units
°C/W
1
11/6/00

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