DataSheetWiki


IRF5800 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)

Numéro de référence IRF5800
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRF5800 fiche technique
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
D
D
G
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD - 93850
IRF5800
HEXFET® Power MOSFET
A
1 6D
VDSS = -30V
2 5D
3 4S
Top View
RDS(on) = 0.085
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
2/8/00

PagesPages 8
Télécharger [ IRF5800 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF5800 Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm) International Rectifier
International Rectifier
IRF5800PBF Power MOSFET ( Transistor ) International Rectifier
International Rectifier
IRF5801 Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A) International Rectifier
International Rectifier
IRF5801PbF Power MOSFET ( Transistor ) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche