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Numéro de référence | IRF540FI | ||
Description | N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
IRF540
IRF540FI
N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI
POWER MOSFET
TYPE
V DSS
RDS(on)
ID
IRF540
I RF5 40F I
100 V < 0.077 Ω
100 V < 0.077 Ω
30 A
16 A
s TYPICAL RDS(on) = 0.050 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
3
2
1
TO-220
3
2
1
TO-220FI
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( •)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Viso Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
IRF530
IRF 530 FI
100
100
± 20
30 17
21 12
120 120
150 45
1 0.3
- 2000
-65 to 175
175
(1) ISD ≤30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V
oC
oC
April 1998
1/6
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Pages | Pages 6 | ||
Télécharger | [ IRF540FI ] |
No | Description détaillée | Fabricant |
IRF540F1 | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220 Tube | New Jersey Semiconductor |
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IRF540FI | N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET | STMicroelectronics |
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