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PDF IRF530 Data sheet ( Hoja de datos )
| Número de pieza | IRF530 | |
| Descripción | N-Channel Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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1. IRF530 vishay  Hay una vista previa y un enlace de descarga de IRF530 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRF530
February 2002
[ /Title
(IRF53
0,
RF1S5
30SM)
/Sub-
ject
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs,
Inter-
sil
Corpo-
ration,
TO-
220AB
, TO-
263AB
14A, 100V, 0.160 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17411.
Ordering Information
PART NUMBER
PACKAGE
IRF530
TO-220AB
BRAND
IRF530
NOTE: When ordering, use the entire part number.
Features
• 14A, 100V
• rDS(ON) = 0.160Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
IRF530 Rev. B1
1 page  
IRF530
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1500
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
900
600
CISS
300 COSS
CRSS
0
1 10
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
8
25oC
6 175oC
4
2
0
0 5 10 15 20 25
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
175oC
1
25oC
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 14A
16
12
8
VDS = 50V
VDS = 20V
VDS = 80V
4
0
0 6 12 18 24 30
QG, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
5
IRF530 Rev. B1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF530.PDF ] | |
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