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PDF IRF530 Data sheet ( Hoja de datos )
| Número de pieza | IRF530 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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1. IRF530 vishay  Hay una vista previa y un enlace de descarga de IRF530 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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IRF530
N-CHANNEL 100V - 0.115 Ω - 14A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
IRF530
100 V <0.16 Ω
14 A
s TYPICAL RDS(on) = 0.115Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
s 175 oC OPERATING TEMPERATURE
t(s)DESCRIPTION
This MOSFET series realized with STMicroelectronics
cunique STripFET™ process has specifically been
udesigned to minimize input capacitance and gate charge.
dIt is therefore suitable as primary switch in advanced
rohigh-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer applications. It is
Palso intended for any applications with low gate drive
terequirements.
leAPPLICATIONS
os HIGH CURRENT, HIGH SWITCHING SPEED
bss SOLENOID AND RELAY DRIVERS
Os REGULATOR
-s DC-DC & DC-AC CONVERTERS
t(s)s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
cABS, AIR-BAG, LAMPDRIVERS, etc.)
roduABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
PVDS Drain-source Voltage (VGS = 0)
teVDGR
Drain-gate Voltage (RGS = 20 kΩ)
leVGS Gate- source Voltage
soID Drain Current (continuous) at TC = 25°C
Ob ID Drain Current (continuous) at TC = 100°C
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
100
100
± 20
14
10
Unit
V
V
V
A
A
IDM(•) Drain Current (pulsed)
56 A
Ptot Total Dissipation at TC = 25°C
60 W
Derating Factor
0.4 W/°C
dv/dt (1) Peak Diode Recovery voltage slope
20 V/ns
EAS (2) Single Pulse Avalanche Energy
70 mJ
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
August 2002
-55 to 175
°C
(1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 14A, VDD = 50V
1/8
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @.
1 page  
Normalized Gate Threshold Voltage vs Temperature
IRF530
Normalized on Resistance vs Temperature
)Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
Obsolete Product(s) - Obsolete Product(s. .
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF530.PDF ] | |
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