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PDF IRF510 Data sheet ( Hoja de datos )
| Número de pieza | IRF510 | |
| Descripción | 5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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 1. 0.540 Ohm/ N-Channel Power MOSFET  Hay una vista previa y un enlace de descarga de IRF510 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRF510
November 1999 File Number 1573.4
5.6A, 100V, 0.540 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF510
TO-220AB
IRF510
NOTE: When ordering, include the entire part number.
Features
• 5.6A, 100V
• rDS(ON) = 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1 page  
IRF510
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS ≈ CDS + CGD
300
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200 CISS
COSS
100
0
1
CRSS
2 5 10 2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VDS ≥ 50V
TJ = 25oC
1.5
TJ = 175oC
1.0
0.5
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 175oC
1
TJ = 25oC
0.1
0 0.4 0.8 1.2 1.6 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 3.4A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF510.PDF ] | |
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