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Seme LAB - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Numéro de référence IRF460
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Fabricant Seme LAB 
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IRF460 fiche technique
IRF460
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
Pin 1 – Gate
2
3
(case)
3.84 (0.151)
4.09 (0.161)
Pin 2 – Source
7.92 (0.312)
12.70 (0.50)
Case – Drain
VDSS
ID(cont)
RDS(on)
500V
21A
0.27
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS
Gate – Source Voltage
Total Power Dissipation @ Tcase = 25°C
PD Derate Linearly
TJ , TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSS
Drain – Source Breakdown Voltage
VGS = 0V , ID = 1mA
IDSS
Zero Gate Voltage Drain Current
(VGS = 0V)
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
IGSS
Gate – Source Leakage Current
VGS = ±20V , VDS = 0V
VGS(TH) Gate Threshold Voltage
VDS = VGS , ID = 250µA
ID(ON)
On State Drain Current 2
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
RDS(ON) Drain – Source On State Resistance 2
VGS = 10V , ID = 13A
VGS = 10V , ID = 21A
500
21
84
±20
300
2.4
–55 to 150
300
V
A
A
V
W
W/°C
°C
Min.
500
2
Typ. Max. Unit
V
25
µA
250
±100 nA
4V
21 A
0.27
0.31
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
Prelim. 11/98

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