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PDF IRF440 Data sheet ( Hoja de datos )
| Número de pieza | IRF440 | |
| Descripción | 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF440
March 1999 File Number 2308.3
8A, 500V, 0.850 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17425.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF440
TO-204AE
IRF440
NOTE: When ordering, use the entire part number.
Features
• 8A, 500V
• rDS(ON) = 0.850Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
Typical Performance Curves (Continued)
IRF440
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
1200
600
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
VDS ≥ 50V
80µs PULSE TEST
12
9
6
TJ = 25oC
TJ = 150oC
3
0
0 3 6 9 12 15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
10
TJ = 150oC
1
TJ = 25oC
0.1
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 8.0A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
0
0
12 24
36 48
60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF440.PDF ] | |
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