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PDF IRF3808 Data sheet ( Hoja de datos )
| Número de pieza | IRF3808 | |
| Descripción | Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=140A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF3808 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 94291B
AUTOMOTIVE MOSFET
IRF3808
Typical Applications
HEXFET® Power MOSFET
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
Benefits
D
VDSS = 75V
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
G
RDS(on) = 0.007Ω
q 175°C Operating Temperature
q Fast Switching
ID = 140AV
S
q Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
140V
97V
550
330
2.2
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
02/06/02
1 page  
IRF3808
140
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100
TC , Case Temperature
125 150
( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF3808.PDF ] | |
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