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IRF3805S fiches techniques PDF

International Rectifier - AUTOMOTIVE MOSFET

Numéro de référence IRF3805S
Description AUTOMOTIVE MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3805S fiche technique
PD - 95880
AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
G
TO-220AB
IRF3805
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
www.irf.com
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
IRF3805
IRF3805S
IRF3805L
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 3.3m
S ID = 75A
D2Pak
IRF3805S
TO-262
IRF3805L
Max.
220
160
75
890
130
2.2
± 20
730
940
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
°C/W
1
10/21/04

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