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IRF3708 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

Numéro de référence IRF3708
Description Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3708 fiche technique
PD - 93938B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
VDSS
30V
IRF3708
IRF3708S
IRF3708L
HEXFET® Power MOSFET
RDS(on) max
12m
ID
62A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3708
D2Pak
IRF3708S
TO-262
IRF3708L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
±12
62
52
248
87
61
0.58
-55 to + 175
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
–––
62
40
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
8/22/00

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