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IRF3706L fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)

Numéro de référence IRF3706L
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3706L fiche technique
PD - 93936A
SMPS MOSFET
IRF3706
IRF3706S
IRF3706L
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
8.5m
ID
77A
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3706
D2Pak
IRF3706S
TO-262
IRF3706L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)…
Max.
20
± 12
77
54
280
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
0.50
–––
–––
Max.
1.7
–––
62
40
Units
°C/W
Notes  through … are on page 11
www.irf.com
1
7/5/00

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