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PDF IRF3007 Data sheet ( Hoja de datos )
| Número de pieza | IRF3007 | |
| Descripción | AUTOMOTIVE MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF3007 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD -94424A
AUTOMOTIVE MOSFET
IRF3007
Typical Applications
● 42 Volts Automotive Electrical Systems
Features
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Automotive [Q101] Qualified
G
Description
Specifically designed for Automotive applications, this
design of HEXFET® Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0126Ω
ID = 75A
S
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
80
56
75
320
200
1.3
± 20
280
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
1.1 (10)
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.74
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
N•m (lbf•in)
Units
°C/W
1
9/16/02
1 page  
IRF3007
80
LIMITED BY PACKAGE
60
40
20
0
25 50 75 100 125 150 175
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
3.0
ID = 80A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF3007.PDF ] | |
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