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Número de pieza | IRF2805L | |
Descripción | AUTOMOTIVE MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! AUTOMOTIVE MOSFET
PD - 94428
IRF2805S
IRF2805L
Typical Applications
● Climate Control
● ABS
● Electronic Braking
● Windshield Wipers
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 4.7mΩ
S ID = 135AV
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
D2Pak
IRF2805S
TO-262
IRF2805L
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Single Pulse Avalanche Energy Tested ValueX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135V
96V
700
200
1.3
± 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted, steady state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
06/10/02
1 page IRF2805S/IRF2805L
140
LIMITED BY PACKAGE
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page IRF2805S/IRF2805L
D2Pak Tape & Reel Information
TRR
1.60 (.0 63 )
1.50 (.0 59 )
4.10 (.161)
3.90 (.153)
F E E D DIRE CTION 1.85 (.0 73 )
1.65 (.0 65 )
TRL
10.90 (.429)
10.70 (.421)
1.60 (.06 3)
1.50 (.05 9)
11.60 (.457)
11.40 (.449)
15.42 (.609 )
15.22 (.601 )
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.014 5)
0.342 (.013 5)
24.30 (.95 7)
23.90 (.94 1)
4.7 2 (.136)
4.5 2 (.178)
FEED D IRECTIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0 .0 0
( 14 .1 7 3)
MAX.
60.00 (2.362)
MIN .
NOTES :
1. C O M FO RM S TO EIA-418.
2. C O NTR O LLING DIM ENSIO N : M ILLIM ETER.
3. D IM ENSIO N M EASUR ED @ HU B.
4. IN CL UD E S F L A NG E DIS T O RT IO N @ O UT E R E D G E.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/02
www.irf.com
11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRF2805L.PDF ] |
Número de pieza | Descripción | Fabricantes |
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