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PDF IRF240 Data sheet ( Hoja de datos )
| Número de pieza | IRF240 | |
| Descripción | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF240 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRF240
March 1999 File Number 1584.3
18A, 200V, 0.180 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFETs designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF240
TO-204AE
IRF240
NOTE: When ordering, include the entire part number.
Features
• 18A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF240
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
2000
1800
1200
800
400
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
≈
CGD
CDS
+
CGS
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0
0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
19.0
80µs PULSE TEST
15.2
11.4
7.6
TJ = -55oC
TJ = 25oC
TJ = 125oC
3.8
0
0 8 16 24 32 40
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
50
20
10
5 TJ = 150oC
TJ = 25oC
2
1
0 0.4 0.8 1.2 1.6 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 18A
16
12
8
VDS = 40V
VDS = 100V
VDS = 160V
4
0
0 12 24 36 48 60
Qg, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF240.PDF ] | |
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