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Numéro de référence | IRF240 | ||
Description | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | ||
Fabricant | Seme LAB | ||
Logo | |||
1 Page
IRF240
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
22.23 (0.875)
Max.
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
11.18 (0.440)
10.67 (0.420)
2
1
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
1.63 (0.064) 11.18 (0.44)
1.52 (0.060)
4.09 (0.161)
3.84 (0.151)
2 Pls
16.97 (0.668)
16.87 (0.664)
TO3 METAL PACKAGE
Pin 1 = Source Pin 2 Gate
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
200V
18A
0.18W
FEATURES
• HERMETICALLY SEALED TO3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
18A
ID Continuous Drain Current @ Tcase = 100°C
11A
IDM Pulsed Drain Current
72A
PD Power Dissipation @ Tcase = 25°C
125W
Linear Derating Factor
1.0W/°C
TJ , Tstg
RqJC
RqJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
1.0°C/W max.
30°C/W max.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 6/00
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Pages | Pages 2 | ||
Télécharger | [ IRF240 ] |
No | Description détaillée | Fabricant |
IRF240 | N-CHANNEL POWER MOSFET | Samsung semiconductor |
IRF240 | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | Seme LAB |
IRF240 | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRF240 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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